氫脆機理模型（AIDE、HEDE、HESIV、HELP）和氫探測技術（TDS、HMT、SIMS、SKP、SKPFM、APT）
2024-10-14 14:20:57
作者：考拉腐蝕 來源：考拉腐蝕
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the ingress of H atoms from the H-containing atmosphere, followed by its diffusion(even at room temperature) to stress-concentated fields and micro structural traps; the interacttion between H atoms and a vatiety of multi-demensional microstrcutural defects including vacancies, solute atoms, dislocations, interfaces and micro-voids/cracks； the promoted damage nucleation and evolution due to the H-defect interactions.
HEDE, H-enhanced decohesion; HELP, H-enhanced localized plasticity; HESIV, H-enhanced strain-induced vacancies; AIDE, Adsorption-induced dislocation emmission;
TDS, Thermal desorption spectrometry 熱脫附光譜; HMT, H microprint technique 氫微印技術; SIMS, Secondary ion mass spectroscopy 二次離子質譜; SKP, Scanning Kelvin probe 掃描開爾文探針; SKPFM, Scanning Kelvin probe force microscopy 掃描開爾文探針力顯微鏡; APT, Atom probe tomography 原子探針斷層成像; Netron radiography/tomography 中子射線斷層成像;
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