上海交通大學密西根學院朱虹老師課題組誠聘博士后一名,負責或協助團隊進行金屬合金體系的腐蝕性能的理論預測和腐蝕機理的研究,并在現有的高通量計算平臺上開發針對腐蝕相關基礎參數的高通量計算工作流。我們誠摯邀請具有理論計算、電化學背景同學的加入。
我們將與腐蝕實驗團隊以及世界各地的材料基因組計算研究團隊開展緊密合作( UC Berkeley, University of Michigan, UC San Diego, Georgia Tech, University of Maryland, etc)。
待遇:
1. 年收入22w+, 享受相應上海交通大學福利待遇;
2. 根據上海市博士后管理政策辦理有關落戶事宜;
3. 優秀者可轉入專職科研序列。
要求:
1. 擁有材料、化學或相關專業的博士學位
2. 具有理論模擬計算經驗或具有豐富的機器學習特別是材料研究領域的經驗
4. 能夠獨立開展研究,在知名期刊上以第一作者發表論文
5. 在同等條件下,優先考慮具有較高編程能力的同學
感興趣的申請者請發郵件至hong.zhu@sjtu.edu.cn;來信請附簡歷和可以到站的時間。課題組鏈接umji.sjtu.edu.cn/~hzhu。
朱虹簡介
助理教授, 材料科學與工程
上海交通大學密西根聯合學院
上海交通大學材料基因組聯合研究中心
榮譽獎勵
Shanghai Science and Technology Commission's Young Scientific Talent YANG FAN Program, 2016
NSF sponsored travel award, Materials Computation Center, University of Illinois Urbana-Champaign, 2011
Doctoral dissertation fellowship, University of Connecticut, 2011
Best Oral Paper Prize, 18th Connecticut Microelectronics and Optoelectronics Conference, 2009
Fudi Fellowship and Excellent Academic Scholarship, Shanghai Jiao Tong University, 2003-2006
科研方向
Advanced energy and electronic materials design through atomistic modeling, high throughput computations and data mining
Physical property tailoring through band structure, defect and interface engineering
發表論文
X. Li, Y. Qiao, S. Guo, Z. Xu, H. Zhu, X. Zhang, Y. Yuan, P. He, M. Ishida, and H. Zhou, “Direct Visualization of the Reversible O2?/O? Redox Process in Li-Rich Cathode Materials ”, Adv. Mater. 1705197 (2018)。
Z. Luo, H. Zhu, T. Ying, D. Li, X. Zeng, “First principles calculations on the influence of solute elements and chlorine adsorption on the anodic corrosion behavior of Mg (0001) surface”, Surface Science (2018)。
Q. Dong, Z. Luo, H. Zhu, L. Wang, T. Ying, Z. Jin, D. Li,W. Ding, X. Zeng, “Basal-plane stacking-fault energies of Mg alloys: A first-principles study of metallic alloying effects”, Journal of Materials Science & Technology (2018)。
J Wu, W Qi, Z Luo, K Liu, H Zhu, “Electronic Structure and Stability of Lead-free Hybrid Halide Perovskites: A Density Functional Theory Study”, Journal of Shanghai Jiaotong University (Science) 23 (1), 202-208 (2018)。
Y Qin, F Li, P Tu, Y Ma, W Chen, F Shi, Q Xiang, H Shan, L Zhang, P Tao, “Ag3PO4 electrocatalyst for oxygen reduction reaction: enhancement from positive charge”, RSC Advances 8 (10), 5382-5387 (2018)。
ZM Gibbs, F Ricci, G Li, H Zhu, K Persson, G Ceder, G Hautier, A Jain, “Effective mass and Fermi surface complexity factor from ab initio band structure calculations”, npj Computational Materials 3 (1), 8 (2017)。
U Aydemir, JH P?hls, H Zhu, G Hautier, S Bajaj, ZM Gibbs, W Chen, G Li, “YCuTe2: a member of a new class of thermoelectric materials with CuTe4-based layered structure”, J. Mater. Chem. A 4 (7), 2461-2472 (2016)。
H. Zhu, G. Hautier, U. Aydemir, Z. M. Gibbs, G. Li, S. Bajaj, J. P?hls, D. Broberg, W. Chen, A. Jain, M. Anne White, M. Asta, G. J. Snyder, K. Persson and G. Ceder, “Computational and experimental investigation of TmAgTe2 and XYZ2 compounds, a new group of thermoelectric materials identified by first-principles high-throughput screening”, J. Mater. Chem. C, 3, 10554-10565 (2015)。
W. G. Zeier, H. Zhu, Z. M. Gibbs, G. Ceder, W. Tremel, and G. J. Snyder, “Band convergence in the non-cubic chalcopyrite compounds Cu2MGeSe4”, J. Mater Chem C 2, 10189 (2014)。
H. Zhu, W. Sun, R. Armiento, P. Lazic, and G. Ceder, “Band structure engineering through orbital interaction for enhanced thermoelectric power factor”, Appl. Phys. Lett. 104, 082107 (2014)。
H. Zhu, G. Ramanath, and R. Ramprasad, “Interface engineering through atomic dopants in HfO2-based gate stacks”, J. Appl. Phys. 114, 114310 (2013)。
R. Ramprasad, H. Zhu, P. Rinke and M. Scheffler, “New perspective on formation energies and energy levels of point defects in non-metals”, Phys. Rev. Lett. 108, 066404 (2012)。
R. J. Mehata, Y. Zhang, H. Zhu, D. Parker, M. Belley, D. Singh, R. Ramprasad, T. Tasciuc, G. Ramanath, “Seebeck and figure of merit enhancement in nanostructured antimony telluride by antisite defect suppression through sulfur doping”, Nano. Lett. 12, 4523 (2012)。
H. Zhu, C. Tang, L. R. Fonseca and R. Ramprasad, “Recent progress in ab initio simulations of hafnia-based gate stacks”, J. Mater. Sci. 47, 7399 (2012)。
H. Zhu and R. Ramprasad, “The effective work function of metals interfaced with dielectrics: A first principles study of the Pt-HfO2 interface”, Phys. Rev. B 83, 081416 (R) (2011)。
Y. Zhong, H. Zhu, L. Shaw and R. Ramprasad, “The equilibrium morphology of WC particles-a combined ab initio and experimental study”, Acta Mater. 59, 3748 (2011)。
H. Zhu, C. Tang and R. Ramprasad, “Phase equilibria at Si-HfO2 and Pt-HfO2 interfaces from first principles thermodynamics”, Phys. Rev. B 82, 235413 (2010)。
H. Zhu, M. Aindow and R. Ramprasad, “Stability and work function of TiCxN1-x alloy surfaces: Density functional theory calculations”, Phys. Rev. B 80, 201406 (R) (2009)。
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